BSC0996NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

10 mJ

Pulsed Drain Current-Max (IDM) :

52A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8.5A

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Number of Elements :

1

Terminal Form :

Flat

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Surface Mount :

yes

Power Dissipation-Max :

2.5W Ta

Number of Terminations :

5

Factory Lead Time :

13 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

34V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

13A Ta

DS Breakdown Voltage-Min :

34V

Rds On (Max) @ Id, Vgs :

9m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.012Ohm

Packaging :

Tape and Reel (TR)