BSC098N10NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 30A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

11A

Pulsed Drain Current-Max (IDM) :

240A

Avalanche Energy Rating (Eas) :

30 mJ

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Rise Time :

5ns

JESD-30 Code :

R-PDSO-F5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Terminal Position :

Dual

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Reach Compliance Code :

not_compliant

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

3.8V @ 36μA

Number of Pins :

8

Height :

1.1mm

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 50V

Number of Elements :

1

Number of Terminations :

5

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Published :

2013

Turn-Off Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 69W Tc

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Power Dissipation :

69W

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel