BSC097N06NSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 40A, 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

12A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0097Ohm

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

3W Ta 43W Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.3V @ 14μA

Terminal Position :

Dual

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

184A

Current - Continuous Drain (Id) @ 25°C :

13A Ta 48A Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Avalanche Energy Rating (Eas) :

13 mJ

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Series :

OptiMOS™

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant