BSC096N10LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

45 mJ

Drain Current-Max (Abs) (ID) :

72A

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.3V @ 36μA

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

13 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminations :

5

Series :

OptiMOS™ 5

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

Reach Compliance Code :

Compliant

Surface Mount :

yes

FET Type :

N-Channel

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 50V

Pulsed Drain Current-Max (IDM) :

287A

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

14.6nC @ 4.5V

Power Dissipation-Max :

3W Ta 83W Tc

Transistor Application :

SWITCHING

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0096Ohm

Operating Mode :

ENHANCEMENT MODE