BSC094N06LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

47A Tc

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 4.5V

Vgs(th) (Max) @ Id :

2.3V @ 14μA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4 ns

Power Dissipation :

2.1W

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 24A, 10V

Transistor Element Material :

SILICON

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 30V

FET Type :

N-Channel

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

36W Tc

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Published :

2013

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Height :

1.1mm

Drain-source On Resistance-Max :

0.0094Ohm

Surface Mount :

yes

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

11A

Number of Channels :

1

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V