BSC090N03LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

13A

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

2.6ns

Series :

OptiMOS™

Number of Elements :

1

Factory Lead Time :

26 Weeks

Published :

2013

Contact Plating :

Tin

Lead Free :

Contains Lead

Max Dual Supply Voltage :

30V

ECCN Code :

EAR99

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 32W Tc

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

5

Halogen Free :

Halogen Free

Power Dissipation :

32W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

Pin Count :

8

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

13A Ta 48A Tc

Terminal Form :

Flat