BSC0909NSATMA1

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Mfr.Part #
BSC0909NSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 34V 12A/44A TDSON
Stock
15,174
In Stock :
15,174

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Dual
Avalanche Energy Rating (Eas) :
10 mJ
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Turn On Delay Time :
9.6 ns
Continuous Drain Current (ID) :
44A
Pin Count :
8
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Rise Time :
4.4ns
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PDSO-F5
Series :
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :
1110pF @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 27W Tc
Published :
2013
Vgs(th) (Max) @ Id :
2V @ 250μA
JESD-609 Code :
e3
Turn-Off Delay Time :
8.9 ns
Number of Elements :
1
Max Dual Supply Voltage :
30V
Factory Lead Time :
39 Weeks
Lead Free :
Contains Lead
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
9.2m Ω @ 20A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
176A
Reach Compliance Code :
not_compliant
Number of Pins :
8
Pbfree Code :
No
Number of Terminations :
5
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
12A
Drain to Source Voltage (Vdss) :
34V
Drain-source On Resistance-Max :
0.0091Ohm
Transistor Application :
SWITCHING
Package / Case :
8-PowerTDFN
Transistor Element Material :
SILICON
Fall Time (Typ) :
5.4 ns
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
12A Ta 44A Tc
Halogen Free :
Halogen Free
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Datasheets
BSC0909NSATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0909NSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Package / Case:8-PowerTDFN, BSC0909NSATMA1 pinout, BSC0909NSATMA1 datasheet PDF, BSC0909NSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0909NSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC0909NSATMA1


N-Channel Tape & Reel (TR) 9.2m Ω @ 20A, 10V ±20V 1110pF @ 15V 15nC @ 10V 34V 8-PowerTDFN

BSC0909NSATMA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 10 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1110pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 12A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 8.9 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 30V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 34V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

BSC0909NSATMA1 Features


the avalanche energy rating (Eas) is 10 mJ
a continuous drain current (ID) of 44A
the turn-off delay time is 8.9 ns
based on its rated peak drain current 176A.
a 34V drain to source voltage (Vdss)


BSC0909NSATMA1 Applications


There are a lot of Infineon Technologies
BSC0909NSATMA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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