BSC0908NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

10 mJ

Qualification Status :

Not Qualified

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0127Ohm

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

34V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

14A Ta 49A Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

200A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

34V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Number of Terminations :

5

Terminal Position :

Dual

Reach Compliance Code :

Compliant

Power Dissipation-Max :

2.5W Ta 30W Tc

Drain Current-Max (Abs) (ID) :

14A