BSC0906NSATMA1

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Mfr.Part #
BSC0906NSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 18A/63A TDSON
Stock
36,382
In Stock :
36,382

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Max Dual Supply Voltage :
30V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-30 Code :
R-PDSO-F5
Current - Continuous Drain (Id) @ 25°C :
18A Ta 63A Tc
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 15V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
8-PowerTDFN
Reach Compliance Code :
not_compliant
Operating Temperature :
-55°C~150°C TJ
Pin Count :
8
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
14 mJ
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Pulsed Drain Current-Max (IDM) :
252A
Case Connection :
DRAIN
Power Dissipation-Max :
2.5W Ta 30W Tc
Vgs(th) (Max) @ Id :
2V @ 250μA
Published :
2013
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.0064Ohm
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Rise Time :
3.8ns
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 30A, 10V
Qualification Status :
Not Qualified
Terminal Position :
Dual
Number of Pins :
8
Terminal Finish :
Tin (Sn)
Factory Lead Time :
26 Weeks
Series :
OptiMOS™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
63A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Halogen Free :
Halogen Free
Number of Terminations :
5
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Flat
Lead Free :
Contains Lead
Number of Elements :
1
Pbfree Code :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0906NSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, BSC0906NSATMA1 pinout, BSC0906NSATMA1 datasheet PDF, BSC0906NSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0906NSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC0906NSATMA1


N-Channel Tape & Reel (TR) 4.5m Ω @ 30A, 10V ±20V 870pF @ 15V 13nC @ 10V 8-PowerTDFN

BSC0906NSATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 14 mJ.The maximum input capacitance of this device is 870pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 63A.There is no pulsed drain current maximum for this device based on its rated peak drain current 252A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSC0906NSATMA1 Features


the avalanche energy rating (Eas) is 14 mJ
a continuous drain current (ID) of 63A
based on its rated peak drain current 252A.


BSC0906NSATMA1 Applications


There are a lot of Infineon Technologies
BSC0906NSATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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