BSC0904NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Series :

OptiMOS™

Mount :

Surface Mount

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

20A Ta 78A Tc

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

20A

Case Connection :

DRAIN

Rise Time :

4.4ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0052Ohm

Max Dual Supply Voltage :

30V

Number of Pins :

8

Mounting Type :

Surface Mount

Pin Count :

8

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 37W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V