BSC0904NSIATMA1

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Mfr.Part #
BSC0904NSIATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 20A/78A TDSON
Stock
9,568
In Stock :
9,568

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2013
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Transistor Element Material :
SILICON
JESD-30 Code :
R-PDSO-F5
Number of Terminations :
5
Rds On (Max) @ Id, Vgs :
3.7m Ω @ 30A, 10V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2V @ 250μA
RoHS Status :
ROHS3 Compliant
Lead Free :
Contains Lead
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 15V
Factory Lead Time :
26 Weeks
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Series :
OptiMOS™
Mount :
Surface Mount
Pbfree Code :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
20A Ta 78A Tc
Package / Case :
8-PowerTDFN
Continuous Drain Current (ID) :
20A
Case Connection :
DRAIN
Rise Time :
4.4ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Flat
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.0052Ohm
Max Dual Supply Voltage :
30V
Number of Pins :
8
Mounting Type :
Surface Mount
Pin Count :
8
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
2.5W
FET Type :
N-Channel
Power Dissipation-Max :
2.5W Ta 37W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
BSC0904NSIATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0904NSIATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Number of Pins:8, Mounting Type:Surface Mount, BSC0904NSIATMA1 pinout, BSC0904NSIATMA1 datasheet PDF, BSC0904NSIATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC0904NSIATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC0904NSIATMA1


N-Channel Tape & Reel (TR) 3.7m Ω @ 30A, 10V ±20V 1100pF @ 15V 17nC @ 10V 8-PowerTDFN

BSC0904NSIATMA1 Overview


A device's maximum input capacitance is 1100pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

BSC0904NSIATMA1 Features


a continuous drain current (ID) of 20A


BSC0904NSIATMA1 Applications


There are a lot of Infineon Technologies
BSC0904NSIATMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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