BSC0901NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Fall Time (Typ) :

4.6 ns

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 15V

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

400A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Terminal Position :

Dual

Continuous Drain Current (ID) :

28A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Published :

2012

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

28A Ta 100A Tc

Number of Pins :

8

Vgs (Max) :

±20V

Pin Count :

8

Turn-Off Delay Time :

27 ns

Rise Time :

7.2ns

Pbfree Code :

No

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 10V

Turn On Delay Time :

5 ns

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 69W Tc

Number of Terminations :

5

Drain-source On Resistance-Max :

0.0026Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

30V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

Factory Lead Time :

26 Weeks