BSC085N025S G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 15V

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

14A Ta 35A Tc

Terminal Form :

Flat

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

14A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 25μA

Avalanche Energy Rating (Eas) :

120 mJ

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 35A, 10V

Drain-source On Resistance-Max :

0.0085Ohm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

140A

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

25V

Power Dissipation-Max :

2.8W Ta 52W Tc

Number of Terminations :

5

FET Type :

N-Channel

Series :

OptiMOS™

HTS Code :

8541.29.00.95

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Terminal Position :

Dual

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2009