BSC080P03LSGAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-F5

Max Dual Supply Voltage :

-30V

Rise Time :

87ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

16A

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Pin Count :

8

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

5

Transistor Application :

SWITCHING

Contact Plating :

Tin

Power Dissipation-Max :

2.5W Ta 89W Tc

Current - Continuous Drain (Id) @ 25°C :

16A Ta 30A Tc

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

122.4nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Number of Pins :

8

Package / Case :

8-PowerVDFN

Input Capacitance (Ciss) (Max) @ Vds :

6140pF @ 15V

Vgs (Max) :

±25V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Contains Lead

Published :

2010

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™