BSC080N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-F5

Turn On Delay Time :

10 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

13A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Series :

OptiMOS™

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 35W Tc

Terminal Form :

Flat

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Pins :

8

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn-Off Delay Time :

10 ns

Rise Time :

5.4ns

Published :

2002

Fall Time (Typ) :

5.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

13A Ta 53A Tc

Package / Case :

8-PowerTDFN

Power Dissipation :

35W