BSC080N03MSGATMA1
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- Mfr.Part #
- BSC080N03MSGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A/53A TDSON
- Stock
- 37,611
- In Stock ：
- 37,611
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 15V
- Pin Count :
- 8
- Turn On Delay Time :
- 10 ns
- Turn-Off Delay Time :
- 10 ns
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Number of Pins :
- 8
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 5.6 ns
- Factory Lead Time :
- 26 Weeks
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta 35W Tc
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 13A
- Rise Time :
- 5.4ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 35W
- Series :
- OptiMOS™
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F5
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 53A Tc
- Pbfree Code :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 30A, 10V
- Published :
- 2002
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 30V
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- 8-PowerTDFN
- Datasheets
- BSC080N03MSGATMA1
N-Channel Tape & Reel (TR) 8m Ω @ 30A, 10V ±20V 2100pF @ 15V 27nC @ 10V 30V 8-PowerTDFN
BSC080N03MSGATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2100pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
BSC080N03MSGATMA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 10 ns
a 30V drain to source voltage (Vdss)
BSC080N03MSGATMA1 Applications
There are a lot of Infineon Technologies
BSC080N03MSGATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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