BSC079N03SG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2V @ 30μA

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

N-Channel

Lead Free :

Lead Free

Power Dissipation :

2.8W

Fall Time (Typ) :

3.4 ns

Turn-Off Delay Time :

21 ns

Pulsed Drain Current-Max (IDM) :

160A

Case Connection :

DRAIN

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

2230pF @ 15V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0116Ohm

Terminal Finish :

MATTE TIN

Number of Elements :

1

Number of Terminations :

5

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

14.6A Ta 40A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Published :

2005

Continuous Drain Current (ID) :

40A

Rise Time :

4.2ns

Current Rating :

40A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.8W Ta 60W Tc

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Pin Count :

8

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 40A, 10V

Terminal Position :

Dual

Voltage - Rated DC :

30V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

14.6A

Avalanche Energy Rating (Eas) :

120 mJ