BSC076N06NS3GATMA1

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Mfr.Part #
BSC076N06NS3GATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 50A TDSON-8
Stock
51,812
In Stock :
51,812

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2.5W
Input Capacitance :
4nF
Drain to Source Voltage (Vdss) :
60V
Halogen Free :
Halogen Free
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Drain to Source Resistance :
6.2mOhm
Power Dissipation-Max :
2.5W Ta 69W Tc
Turn-Off Delay Time :
20 ns
Series :
OptiMOS™
Lead Free :
Contains Lead
Published :
2009
FET Type :
N-Channel
Rise Time :
40ns
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Min Operating Temperature :
-55°C
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 30V
Max Operating Temperature :
150°C
Max Dual Supply Voltage :
60V
Turn On Delay Time :
15 ns
Vgs(th) (Max) @ Id :
4V @ 35μA
Fall Time (Typ) :
5 ns
Continuous Drain Current (ID) :
50A
RoHS Status :
ROHS3 Compliant
Rds On Max :
7.6 mΩ
Factory Lead Time :
26 Weeks
Supplier Device Package :
PG-TDSON-8-5
Rds On (Max) @ Id, Vgs :
7.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Package / Case :
8-PowerTDFN
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC076N06NS3GATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, BSC076N06NS3GATMA1 pinout, BSC076N06NS3GATMA1 datasheet PDF, BSC076N06NS3GATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC076N06NS3GATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC076N06NS3GATMA1


N-Channel Tape & Reel (TR) 7.6mOhm @ 50A, 10V ±20V 4000pF @ 30V 50nC @ 10V 60V 8-PowerTDFN

BSC076N06NS3GATMA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 6.2mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 60V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

BSC076N06NS3GATMA1 Features


a continuous drain current (ID) of 50A
the turn-off delay time is 20 ns
single MOSFETs transistor is 6.2mOhm
a 60V drain to source voltage (Vdss)


BSC076N06NS3GATMA1 Applications


There are a lot of Infineon Technologies
BSC076N06NS3GATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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