BSC072N025S G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 60W Tc

Pulsed Drain Current-Max (IDM) :

160A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2230pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

25V

Vgs(th) (Max) @ Id :

2V @ 30μA

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Elements :

1

Terminal Form :

Flat

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

15A Ta 40A Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

160 mJ

Reach Compliance Code :

Compliant

Terminal Position :

Dual

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Terminations :

5

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Pbfree Code :

yes

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

15A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0072Ohm

Peak Reflow Temperature (Cel) :

260

Published :

2009

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 40A, 10V

Pin Count :

8

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)