BSC072N025S G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

2230pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2009

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Terminal Position :

Dual

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

25V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 40A Tc

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 30μA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0072Ohm

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-F5

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 40A, 10V

Pin Count :

8

Terminal Form :

Flat

Power Dissipation-Max :

2.8W Ta 60W Tc

Drain Current-Max (Abs) (ID) :

15A

Drain to Source Voltage (Vdss) :

25V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

160 mJ

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Pulsed Drain Current-Max (IDM) :

160A