BSC066N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 50A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta 46W Tc

Terminal Form :

Flat

Series :

OptiMOS™

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

256A

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Avalanche Energy Rating (Eas) :

21 mJ

Published :

2012

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0066Ohm

Drain Current-Max (Abs) (ID) :

15A

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

64A Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

3ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Continuous Drain Current (ID) :

64A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.3V @ 20μA

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Terminal Position :

Dual

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Max Dual Supply Voltage :

60V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Number of Elements :

1