BSC059N04LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

23 ns

Max Dual Supply Voltage :

40V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

16A Ta 73A Tc

Fall Time (Typ) :

3.8 ns

Pulsed Drain Current-Max (IDM) :

292A

Rise Time :

3.4ns

Drain-source On Resistance-Max :

0.0059Ohm

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 50A, 10V

Continuous Drain Current (ID) :

73A

Avalanche Energy Rating (Eas) :

25 mJ

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 20V

Pin Count :

8

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 50W Tc

Terminal Position :

Dual

Published :

2013

Mounting Type :

Surface Mount

Power Dissipation :

50W

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Number of Elements :

1

ECCN Code :

EAR99

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Pbfree Code :

No

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

16A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Factory Lead Time :

26 Weeks

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

2V @ 23μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Series :

OptiMOS™

Radiation Hardening :

No

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Pins :

8

Turn On Delay Time :

5.6 ns