BSC059N04LS6ATMA1
- Mfr.Part #
- BSC059N04LS6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 17A TDSON
- Stock
- 15,670
- In Stock :
- 15,670
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 26 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 830pF @ 20V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 49A Tc 59A Tc
- Package / Case :
- 8-PowerTDFN
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9.4nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3W Ta 38W Tc
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 5.9m Ω @ 50A, 10V
- Datasheets
- BSC059N04LS6ATMA1

N-Channel Tape & Reel (TR) 5.9m Ω @ 50A, 10V ±20V 830pF @ 20V 9.4nC @ 10V 40V 8-PowerTDFN
BSC059N04LS6ATMA1 Description
BSC059N04LS6ATMA1 is a OptiMOSTM6 Power-Transistor,40V in 8-PowerTDFN package, manufactured by Infineon Technologies. According to the BSC059N04LS6ATMA1 datasheet, it can be used in industrial applications.
BSC059N04LS6ATMA1 Features
-
175°Crated
-
N-channel
-
100% avalanche tested
-
Superior thermal resistance
-
Verylowon-resistance RDS(on)
-
Pb-free lead plating;RoHS compliant
-
Optimized for synchronous application
-
Halogen-free according to IEC61249-2-21
BSC059N04LS6ATMA1 Application
-
Industrial
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