BSC057N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

15A Ta 71A Tc

Factory Lead Time :

26 Weeks

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Pulsed Drain Current-Max (IDM) :

284A

Vgs (Max) :

±16V

Qualification Status :

Not Qualified

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta 45W Tc

Pin Count :

8

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0072Ohm

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

25 mJ

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2V @ 250μA

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 30A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain Current-Max (Abs) (ID) :

15A