BSC050NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Drain-source On Resistance-Max :

0.0076Ohm

Terminal Position :

Dual

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

240A

Number of Elements :

1

Published :

2013

DS Breakdown Voltage-Min :

25V

Terminal Form :

Flat

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

39A

Rds On (Max) @ Id, Vgs :

5m Ω @ 30A, 10V

Contact Plating :

Tin

Number of Pins :

8

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

60A

Current - Continuous Drain (Id) @ 25°C :

39A Ta 58A Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 12V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

25V

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Power Dissipation :

2.5W

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Rise Time :

2.2ns

Power Dissipation-Max :

2.5W Ta 28W Tc