BSC050N04LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 27μA

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

57W

Terminal Form :

Flat

Power Dissipation-Max :

2.5W Ta 57W Tc

Published :

2004

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 20V

Rise Time :

3.8ns

Transistor Application :

SWITCHING

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

340A

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5m Ω @ 50A, 10V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

18A Ta 85A Tc

Drain-source On Resistance-Max :

0.0072Ohm

Factory Lead Time :

39 Weeks

JESD-30 Code :

R-PDSO-F5

Pin Count :

8

Number of Terminations :

5

Terminal Position :

Dual

Halogen Free :

Halogen Free

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

35 mJ

Continuous Drain Current (ID) :

85A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V