BSC050N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.0063Ohm

Power Dissipation :

50W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

16A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5m Ω @ 30A, 10V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

No

Pin Count :

8

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 15V

Series :

OptiMOS™

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

320A

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

16A Ta 80A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-F5

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 50W Tc

Avalanche Energy Rating (Eas) :

35 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Rise Time :

7.2ns

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN