BSC050N03LSGXT
- Mfr.Part #
- BSC050N03LSGXT
- Manufacturer
- Infineon Technologies
- Package / Case
- TDSON-8
- Datasheet
- Download
- Description
- BSC050N03 - 12V-300V N-CHANNEL P
- Stock
- 178
- In Stock :
- 178
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.15 mm
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Mounting Style :
- SMD/SMT
- Supplier Device Package :
- PG-TDSON-8-5
- Number of Terminals :
- 8
- Drain to Source Voltage (Vdss) :
- 30 V
- Product Category :
- MOSFET
- Mounting Type :
- Surface Mount
- FET Feature :
- -
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 2.5W (Ta), 50W (Tc)
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Terminal Form :
- Flat
- Manufacturer :
- Infineon
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 18A (Ta), 80A (Tc)
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Length :
- 5.9 mm
- Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 30A, 10V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Series :
- OptiMOS™ 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800 pF @ 15 V
- Packaging :
- MouseReel
- Height :
- 1.27 mm
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 35 mJ
- Rise Time :
- 4 ns
- Terminal Position :
- Dual
- Package :
- Bulk
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- Pulsed Drain Current-Max (IDM) :
- 320 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.0075 Ω
- Brand :
- Infineon Technologies
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- JESD-30 Code :
- R-PDSO-F8
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 8
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Channel Mode :
- Enhancement
- Technology :
- Si
- Package / Case :
- TDSON-8
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 30 V
- Datasheets
- BSC050N03LSGXT

Si N-Channel MouseReel 5mOhm @ 30A, 10V ±20V 2800 pF @ 15 V 35 nC @ 10 V 30 V TDSON-8
BSC050N03LSGXT Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800 pF @ 15 V is its maximum input capacitance.Peak drain current is 320 A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30 V.For this transistor to work, a voltage 30 V is required between drain and source (Vdss).
BSC050N03LSGXT Features
the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 320 A.
a 30 V drain to source voltage (Vdss)
BSC050N03LSGXT Applications
There are a lot of Infineon
BSC050N03LSGXT applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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