BSC050N03LSGXT

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Mfr.Part #
BSC050N03LSGXT
Manufacturer
Infineon Technologies
Package / Case
TDSON-8
Datasheet
Download
Description
BSC050N03 - 12V-300V N-CHANNEL P
Stock
178
In Stock :
178

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Mounting Type :
Surface Mount
HTS Code :
8541.29.00.95
Terminal Position :
Dual
Brand :
Infineon Technologies
Case Connection :
DRAIN
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.0075 Ω
Transistor Application :
SWITCHING
Surface Mount :
yes
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
18A (Ta), 80A (Tc)
Power Dissipation (Max) :
2.5W (Ta), 50W (Tc)
Package / Case :
TDSON-8
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Package :
Bulk
Product Type :
MOSFET
FET Type :
N-Channel
Height :
1.27 mm
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
35 nC @ 10 V
Operating Temperature :
-55°C ~ 150°C (TJ)
Pin Count :
8
FET Feature :
-
Input Capacitance (Ciss) (Max) @ Vds :
2800 pF @ 15 V
Rds On (Max) @ Id, Vgs :
5mOhm @ 30A, 10V
Supplier Device Package :
PG-TDSON-8-5
Drain to Source Voltage (Vdss) :
30 V
Terminal Finish :
MATTE TIN
Packaging :
MouseReel
Number of Channels :
1 Channel
RoHS :
Details
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
35 mJ
Configuration :
Single
Product Category :
MOSFET
Terminal Form :
Flat
Subcategory :
MOSFETs
Width :
5.15 mm
Series :
OptiMOS™ 3
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
JESD-30 Code :
R-PDSO-F8
Length :
5.9 mm
Product Status :
Active
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Manufacturer :
Infineon
Rise Time :
4 ns
DS Breakdown Voltage-Min :
30 V
Transistor Polarity :
N-Channel
Technology :
Si
Mounting Style :
SMD/SMT
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Number of Terminals :
8
Pulsed Drain Current-Max (IDM) :
320 A
Vgs (Max) :
±20V
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC050N03LSGXT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TDSON-8, Operating Temperature:-55°C ~ 150°C (TJ), Number of Channels:1 Channel, BSC050N03LSGXT pinout, BSC050N03LSGXT datasheet PDF, BSC050N03LSGXT amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC050N03LSGXT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC050N03LSGXT


Si N-Channel MouseReel 5mOhm @ 30A, 10V ±20V 2800 pF @ 15 V 35 nC @ 10 V 30 V TDSON-8

BSC050N03LSGXT Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800 pF @ 15 V is its maximum input capacitance.Peak drain current is 320 A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30 V.For this transistor to work, a voltage 30 V is required between drain and source (Vdss).

BSC050N03LSGXT Features


the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 320 A.
a 30 V drain to source voltage (Vdss)


BSC050N03LSGXT Applications


There are a lot of Infineon
BSC050N03LSGXT applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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