BSC050N03LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Factory Lead Time :

39 Weeks

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

30V

Mount :

Surface Mount

Drain to Source Resistance :

4.2mOhm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5mOhm @ 30A, 10V

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc

Continuous Drain Current (ID) :

80A

Halogen Free :

Halogen Free

Power Dissipation-Max :

2.5W Ta 50W Tc

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Rise Time :

4ns

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Input Capacitance :

2.8nF

Rds On Max :

5 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2000

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Threshold Voltage :

2.2V

Package / Case :

8-PowerTDFN

Supplier Device Package :

PG-TDSON-8-5

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

Power Dissipation :

50W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Min Operating Temperature :

-55°C

Number of Elements :

1

Contact Plating :

Tin

Number of Pins :

8