BSC0504NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

7 mJ

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 30A, 10V

Max Dual Supply Voltage :

30V

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

21A

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.0047Ohm

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

21A Ta 72A Tc

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 30W Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Position :

Dual

Published :

2013

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 15V

Series :

OptiMOS™

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Continuous Drain Current (ID) :

72A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)