BSC0503NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

22A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

352A

Power Dissipation-Max :

2.5W Ta 36W Tc

Drain-source On Resistance-Max :

0.0037Ohm

Factory Lead Time :

26 Weeks

Terminal Form :

Flat

Halogen Free :

Halogen Free

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

Max Dual Supply Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Continuous Drain Current (ID) :

88A

Vgs (Max) :

±20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3m Ω @ 30A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Avalanche Energy Rating (Eas) :

10 mJ

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2015

Number of Terminations :

5

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

22A Ta 88A Tc