BSC0501NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta 50W Tc

Factory Lead Time :

26 Weeks

Max Dual Supply Voltage :

30V

Drain Current-Max (Abs) (ID) :

29A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0024Ohm

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 15V

Halogen Free :

Halogen Free

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Mounting Type :

Surface Mount

Rise Time :

4ns

Vgs (Max) :

±20V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

20 mJ

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 30A, 10V

FET Feature :

Schottky Diode (Body)

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

2V @ 250μA

Contact Plating :

Tin

Case Connection :

DRAIN