BSC009NE2LS5IATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

33ns

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 30A, 10V

JESD-30 Code :

R-PDSO-F5

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

50 mJ

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2.5W

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 74W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Max Dual Supply Voltage :

25V

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Terminal Form :

Flat

Vgs (Max) :

±16V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Factory Lead Time :

26 Weeks

Height :

1.1mm

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 12V

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

40A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

40A

Transistor Application :

SWITCHING

Published :

2013

Number of Pins :

8

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

27 ns

Fall Time (Typ) :

19 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V