BSC009NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.00125Ohm

JESD-30 Code :

R-PDSO-F5

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Turn On Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 12V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

41A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

48 ns

Avalanche Energy Rating (Eas) :

90 mJ

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Series :

OptiMOS™

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 74W Tc

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Fall Time (Typ) :

19 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Continuous Drain Current (ID) :

100A

Rise Time :

33ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V