BSC009NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Fall Time (Typ) :

19 ns

Continuous Drain Current (ID) :

100A

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

90 mJ

Max Dual Supply Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 12V

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

400A

Terminal Position :

Dual

Turn On Delay Time :

10 ns

Drain Current-Max (Abs) (ID) :

41A

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

2.5W Ta 74W Tc

Lead Free :

Contains Lead

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±16V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Rise Time :

33ns

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

48 ns

Transistor Element Material :

SILICON

Number of Terminations :

5

Drain-source On Resistance-Max :

0.00125Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Published :

2013

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount