BSC009NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rise Time :

33ns

Max Dual Supply Voltage :

25V

Published :

2013

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.00125Ohm

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

41A

Turn-Off Delay Time :

48 ns

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-F5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Continuous Drain Current (ID) :

100A

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

5

Lead Free :

Contains Lead

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta 74W Tc

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 12V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Fall Time (Typ) :

19 ns

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

90 mJ

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes