BSC009NE2LS5ATMA1
- Mfr.Part #
- BSC009NE2LS5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 41A/100A TDSON
- Stock
- 6,467
- In Stock :
- 6,467
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- * Fullname:
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Rise Time :
- 33ns
- Max Dual Supply Voltage :
- 25V
- Published :
- 2013
- Terminal Form :
- Flat
- Drain-source On Resistance-Max :
- 0.00125Ohm
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 41A
- Turn-Off Delay Time :
- 48 ns
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PDSO-F5
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 400A
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 0.9m Ω @ 30A, 10V
- Continuous Drain Current (ID) :
- 100A
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Lead Free :
- Contains Lead
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 2.5W Ta 74W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-PowerTDFN
- Halogen Free :
- Halogen Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- OptiMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 41A Ta 100A Tc
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- Fall Time (Typ) :
- 19 ns
- Mount :
- Surface Mount
- Factory Lead Time :
- 26 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Datasheets
- BSC009NE2LS5ATMA1
BSC009NE2LS5ATMA1 Documents

N-Channel Tape & Reel (TR) 0.9m Ω @ 30A, 10V ±16V 3900pF @ 12V 57nC @ 10V 8-PowerTDFN
BSC009NE2LS5ATMA1 Description
BSC009NE2LS5ATMA1 is a 25V OptiMOSTM5 Power-MOSFET. The Infineon BSC009NE2LS5ATMA1 can be applied in Desktop and server, Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC009NE2LS5ATMA1 is in the TDSON-8 package with 74W power dissipation.
BSC009NE2LS5ATMA1 Features
-
Best-in-class on-state resistance
-
Benchmark switching performance (lowest figure of merits Ron x Qg and Ron x Qgd)
-
RoHS compliant and halogen-free
-
Optimized EMI behavior (integrated damping network)
-
Highest efficiency
-
Highest power density with S3O8 or Power Block package
BSC009NE2LS5ATMA1 Applications
-
Desktop and server
-
Single-phase and multiphase POL
-
CPU/GPU VR in notebooks
-
High power density voltage regulator
-
Or-ing
-
E-fuse
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