BSC009NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Turn On Delay Time :

10 ns

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

100A

Terminal Form :

Flat

Case Connection :

DRAIN

Max Dual Supply Voltage :

25V

Power Dissipation-Max :

2.5W Ta 74W Tc

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 12V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.00125Ohm

Number of Pins :

8

Mount :

Surface Mount

Turn-Off Delay Time :

48 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Pbfree Code :

yes

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

41A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Vgs (Max) :

±16V

Fall Time (Typ) :

19 ns

Avalanche Energy Rating (Eas) :

90 mJ

Transistor Element Material :

SILICON

Rise Time :

33ns