BSC009NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Published :

2012

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Form :

Flat

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Rise Time :

33ns

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 12V

Power Dissipation-Max :

2.5W Ta 96W Tc

Case Connection :

DRAIN

Number of Pins :

8

Mount :

Surface Mount

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

41A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Turn-Off Delay Time :

48 ns

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Pin Count :

8

Factory Lead Time :

26 Weeks

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

19 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Max Dual Supply Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Number of Terminations :

5

Transistor Application :

SWITCHING