BSC010NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

96W

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

39A Ta 100A Tc

Power Dissipation-Max :

2.5W Ta 96W Tc

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Rise Time :

6ns

Number of Elements :

1

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2012

Package / Case :

8-PowerTDFN

Supplier Device Package :

PG-TDSON-8-7

Continuous Drain Current (ID) :

39A

Rds On (Max) @ Id, Vgs :

1mOhm @ 30A, 10V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

800μOhm

Factory Lead Time :

26 Weeks

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

25V