BSC010N04LSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

37A Ta 100A Tc

JESD-30 Code :

R-PDSO-F3

Drain Current-Max (Abs) (ID) :

37A

Rise Time :

48ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

1.05m Ω @ 50A, 10V

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

3

ECCN Code :

EAR99

Max Dual Supply Voltage :

40V

Avalanche Energy Rating (Eas) :

230 mJ

FET Feature :

Schottky Diode (Body)

Fall Time (Typ) :

17 ns

Published :

2012

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Continuous Drain Current (ID) :

100A

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Lead Free :

Contains Lead

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

ULTRA LOW RESISTANCE

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta 139W Tc

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Number of Pins :

8

Factory Lead Time :

39 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 20V

Turn-Off Delay Time :

72 ns