BSC0500NSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Lead Free :

Contains Lead

Package / Case :

8-PowerTDFN

Terminal Form :

Flat

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

30V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0017Ohm

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

40 mJ

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 15V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Continuous Drain Current (ID) :

100A

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 69W Tc

Current - Continuous Drain (Id) @ 25°C :

35A Ta 100A Tc

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 30A, 10V

Drain Current-Max (Abs) (ID) :

35A

Terminal Position :

Dual

Number of Elements :

1

Number of Pins :

8

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-F5