BSC048N025S G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0048Ohm

Current - Continuous Drain (Id) @ 25°C :

19A Ta 89A Tc

Drain to Source Voltage (Vdss) :

25V

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 50A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Form :

Flat

DS Breakdown Voltage-Min :

25V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 35μA

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

5

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 15V

Avalanche Energy Rating (Eas) :

185 mJ

Surface Mount :

yes

Case Connection :

DRAIN

Number of Elements :

1

Terminal Finish :

MATTE TIN

Published :

2008

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

2.8W Ta 63W Tc

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

19A

Transistor Element Material :

SILICON