BSC047N08NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

18A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

400A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.0047Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 40V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Continuous Drain Current (ID) :

18A

Published :

2004

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 50A, 10V

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Vgs (Max) :

±20V

Case Connection :

DRAIN

Turn-Off Delay Time :

44 ns

Transistor Application :

SWITCHING

Power Dissipation :

125W

Power Dissipation-Max :

2.5W Ta 125W Tc

Number of Terminations :

5

Turn On Delay Time :

18 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Package / Case :

8-PowerTDFN

Series :

OptiMOS™

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

11 ns

JESD-609 Code :

e3

Max Dual Supply Voltage :

80V

Rise Time :

17ns

Mount :

Surface Mount

Halogen Free :

Halogen Free

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99