BSC042N03S G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.8W Ta 62.5W Tc

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Published :

2011

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2V @ 50μA

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Series :

OptiMOS™

Terminal Form :

Flat

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

3660pF @ 15V

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

20A Ta 95A Tc

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.0065ohm

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

280 mJ

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

FET Type :

N-Channel