BSC042N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pin Count :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Terminal Form :

Flat

Power Dissipation-Max :

2.5W Ta 57W Tc

Package / Case :

8-PowerTDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

17A Ta 93A Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

372A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

JESD-30 Code :

R-PDSO-F5

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

39 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0054Ohm

Series :

OptiMOS™

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

40 mJ

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

17A

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V