BSC040N10NS5ATMA1

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Mfr.Part #
BSC040N10NS5ATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 100A TDSON
Stock
17,150
In Stock :
17,150

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Halogen Free :
Halogen Free
Element Configuration :
Single
Mounting Type :
Surface Mount
JESD-30 Code :
R-PDSO-F5
Terminal Position :
Dual
FET Type :
N-Channel
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.8V @ 95μA
Max Junction Temperature (Tj) :
150°C
Lead Free :
Contains Lead
Rise Time :
9ns
Avalanche Energy Rating (Eas) :
200 mJ
Rds On (Max) @ Id, Vgs :
4m Ω @ 50A, 10V
Turn On Delay Time :
13 ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
32 ns
Drain to Source Breakdown Voltage :
100V
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
26 Weeks
Number of Channels :
1
Continuous Drain Current (ID) :
100A
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
400A
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Height :
1.1mm
Power Dissipation-Max :
2.5W Ta 139W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-PowerTDFN
Series :
OptiMOS™
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.004ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 50V
Number of Pins :
8
Max Dual Supply Voltage :
100V
Transistor Application :
SWITCHING
Weight :
506.605978mg
Number of Terminations :
5
Terminal Form :
Flat
Published :
2013
Power Dissipation :
139W
Pbfree Code :
yes
Fall Time (Typ) :
10 ns
Datasheets
BSC040N10NS5ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC040N10NS5ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Number of Terminations:5, BSC040N10NS5ATMA1 pinout, BSC040N10NS5ATMA1 datasheet PDF, BSC040N10NS5ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC040N10NS5ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC040N10NS5ATMA1


N-Channel Tape & Reel (TR) 4m Ω @ 50A, 10V ±20V 5300pF @ 50V 72nC @ 10V 8-PowerTDFN

BSC040N10NS5ATMA1 Description


BSC040N10NS5ATMA1 is a 100V OptiMOSTM5Power-Transistor manufactured by Infinen. Highest system efficiency, Reduced switching and conduction losses, Less paralleling required, Increased power density, and Low voltage overshoot are the benefits of BSC040N10NS5ATMA1. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BSC040N10NS5ATMA1 is in the TDSON-8 package with 139w power dissipation.



BSC040N10NS5ATMA1 Features


  • N-channel

  • Optimized for synchronous rectification

  • Ideal for high switching frequency

  • Output capacitance reduction of up to 44% 

  • RDS(on) reduction of up to 43% from the previous generation



BSC040N10NS5ATMA1 Applications


  • Telecom

  • Server

  • Solar

  • Low voltage drives

  • Light electric vehicles

  • Adapter


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