BSC037N08NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Published :

2013

Series :

OptiMOS™

FET Type :

N-Channel

Max Dual Supply Voltage :

80V

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Terminal Position :

Dual

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Terminal Finish :

Tin (Sn)

Number of Terminations :

5

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

80V

JESD-30 Code :

R-PDSO-F5

Drain-source On Resistance-Max :

0.0037Ohm

Threshold Voltage :

3V

Fall Time (Typ) :

7 ns

Drain Current-Max (Abs) (ID) :

22A

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Max Junction Temperature (Tj) :

150°C

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 50A, 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

14 ns

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 40V

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

2.5W Ta 114W Tc

Vgs(th) (Max) @ Id :

3.8V @ 72μA

Height :

1.1mm

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

400A

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

Rise Time :

10ns

Weight :

506.605978mg

Turn-Off Delay Time :

26 ns

Factory Lead Time :

26 Weeks

Pbfree Code :

yes

Mount :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Channels :

1