BSC035N10NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Published :

2013

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

5

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 156W Tc

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Avalanche Energy Rating (Eas) :

300 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

100A

Turn On Delay Time :

22 ns

Terminal Position :

Dual

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 50V

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Threshold Voltage :

3V

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 50A, 10V

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Pbfree Code :

yes

Package / Case :

8-PowerTDFN

Number of Elements :

1

Vgs (Max) :

±20V

Turn-Off Delay Time :

47 ns

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0035Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Max Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

3.8V @ 115μA