BSC035N04LSGATMA1

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Mfr.Part #
BSC035N04LSGATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 21A/100A TDSON
Stock
111,884
In Stock :
111,884

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Published :
2009
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
69W
Case Connection :
DRAIN
Mount :
Surface Mount
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Halogen Free :
Halogen Free
ECCN Code :
EAR99
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
64nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
21A Ta 100A Tc
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Max Dual Supply Voltage :
40V
Fall Time (Typ) :
5 ns
Power Dissipation-Max :
2.5W Ta 69W Tc
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0053Ohm
Reach Compliance Code :
not_compliant
Continuous Drain Current (ID) :
21A
Avalanche Energy Rating (Eas) :
65 mJ
Factory Lead Time :
26 Weeks
JESD-30 Code :
R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
31 ns
Packaging :
Tape and Reel (TR)
Pbfree Code :
No
Number of Terminations :
5
Additional Feature :
LOGIC LEVEL COMPATIBLE
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 20V
Number of Pins :
8
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Rise Time :
4.6ns
Terminal Form :
Flat
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lead Free :
Contains Lead
Turn On Delay Time :
7.9 ns
Mounting Type :
Surface Mount
Package / Case :
8-PowerTDFN
Pulsed Drain Current-Max (IDM) :
400A
Transistor Application :
SWITCHING
Series :
OptiMOS™
Terminal Position :
Dual
Vgs(th) (Max) @ Id :
2V @ 36μA
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3.5m Ω @ 50A, 10V
Pin Count :
8
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Datasheets
BSC035N04LSGATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC035N04LSGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, BSC035N04LSGATMA1 pinout, BSC035N04LSGATMA1 datasheet PDF, BSC035N04LSGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC035N04LSGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC035N04LSGATMA1


N-Channel Tape & Reel (TR) 3.5m Ω @ 50A, 10V ±20V 5100pF @ 20V 64nC @ 10V 8-PowerTDFN

BSC035N04LSGATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5100pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSC035N04LSGATMA1 Features


the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 21A
the turn-off delay time is 31 ns
based on its rated peak drain current 400A.


BSC035N04LSGATMA1 Applications


There are a lot of Infineon Technologies
BSC035N04LSGATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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