BSC034N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Max Dual Supply Voltage :

60V

Number of Pins :

8

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pulsed Drain Current-Max (IDM) :

400A

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.3V @ 41μA

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 50A, 10V

Factory Lead Time :

26 Weeks

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0034Ohm

Terminal Finish :

Tin (Sn)

Rise Time :

5ns

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-609 Code :

e3

Lead Free :

Contains Lead

Package / Case :

8-PowerTDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta 74W Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 30V

Published :

2012