BSC034N03LSGATMA1

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Mfr.Part #
BSC034N03LSGATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 22A/100A TDSON
Stock
35,079
In Stock :
35,079

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-PowerTDFN
Pbfree Code :
No
ECCN Code :
EAR99
Max Dual Supply Voltage :
30V
Case Connection :
DRAIN
FET Type :
N-Channel
Threshold Voltage :
2.2V
Operating Temperature :
-55°C~150°C TJ
Published :
2013
Halogen Free :
Halogen Free
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
3.4m Ω @ 30A, 10V
Power Dissipation :
2.5W
Rise Time :
4.8ns
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Pulsed Drain Current-Max (IDM) :
400A
REACH SVHC :
No SVHC
Lead Free :
Contains Lead
Packaging :
Tape and Reel (TR)
Number of Terminations :
5
Gate to Source Voltage (Vgs) :
20V
Pin Count :
8
JESD-609 Code :
e3
Power Dissipation-Max :
2.5W Ta 57W Tc
Avalanche Energy Rating (Eas) :
55 mJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
22A
Factory Lead Time :
39 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
OptiMOS™
Reach Compliance Code :
not_compliant
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
Fall Time (Typ) :
4.6 ns
Continuous Drain Current (ID) :
100A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
22A Ta 100A Tc
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Turn On Delay Time :
6.9 ns
Mounting Type :
Surface Mount
Terminal Form :
NO LEAD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Additional Feature :
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Number of Elements :
1
Turn-Off Delay Time :
28 ns
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 15V
Number of Pins :
8
JESD-30 Code :
R-PDSO-N5
Datasheets
BSC034N03LSGATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC034N03LSGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, Number of Pins:8, BSC034N03LSGATMA1 pinout, BSC034N03LSGATMA1 datasheet PDF, BSC034N03LSGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC034N03LSGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC034N03LSGATMA1


N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 4300pF @ 15V 52nC @ 10V 8-PowerTDFN

BSC034N03LSGATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 55 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 22A.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.2V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BSC034N03LSGATMA1 Features


the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 28 ns
based on its rated peak drain current 400A.
a threshold voltage of 2.2V


BSC034N03LSGATMA1 Applications


There are a lot of Infineon Technologies
BSC034N03LSGATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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