BSC032NE2LSATMA1
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- Mfr.Part #
- BSC032NE2LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 22A/84A TDSON
- Stock
- 37,582
- In Stock ：
- 37,582
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 12V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-N5
- Transistor Element Material :
- SILICON
- Pin Count :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 26 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- NO LEAD
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 30A, 10V
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-PowerTDFN
- Pulsed Drain Current-Max (IDM) :
- 336A
- Halogen Free :
- Halogen Free
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 2.8W Ta 78W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 2.8ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Power Dissipation :
- 2.5W
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Max Dual Supply Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 84A Tc
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 22A
- Series :
- OptiMOS™
- Datasheets
- BSC032NE2LSATMA1
N-Channel Tape & Reel (TR) 3.2m Ω @ 30A, 10V ±20V 1200pF @ 12V 16nC @ 10V 8-PowerTDFN
BSC032NE2LSATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 12V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 336A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 25V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSC032NE2LSATMA1 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 336A.
BSC032NE2LSATMA1 Applications
There are a lot of Infineon Technologies
BSC032NE2LSATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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