BSC032N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

40V

Continuous Drain Current (ID) :

98A

RoHS Status :

ROHS3 Compliant

Rise Time :

4ns

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

21A Ta 98A Tc

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

392A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 50A, 10V

Case Connection :

DRAIN

Published :

2012

Power Dissipation-Max :

2.5W Ta 52W Tc

JESD-30 Code :

R-PDSO-F5

Drain-source On Resistance-Max :

0.0044Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 20V

Transistor Element Material :

SILICON

Terminal Form :

Flat

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mount :

Surface Mount

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

30 mJ

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks