BSC032N03SG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

2.8W Ta 78W Tc

Vgs (Max) :

±20V

Rise Time :

7ns

Avalanche Energy Rating (Eas) :

550 mJ

Lead Free :

Lead Free

Terminal Form :

Flat

ECCN Code :

EAR99

Continuous Drain Current (ID) :

100A

Voltage - Rated DC :

30V

Drain Current-Max (Abs) (ID) :

23A

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 50A, 10V

Fall Time (Typ) :

5.4 ns

Pulsed Drain Current-Max (IDM) :

200A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

23A Ta 100A Tc

Drain-source On Resistance-Max :

0.0049Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

50A

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Case Connection :

DRAIN

Series :

OptiMOS™

Turn-Off Delay Time :

32 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 15V

Terminal Finish :

MATTE TIN

Power Dissipation :

2.8W

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 5V

Qualification Status :

Not Qualified

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 70μA

JESD-30 Code :

R-PDSO-F5