BSC030N08NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

20 ns

Published :

2013

Terminal Position :

Dual

Number of Elements :

1

Element Configuration :

Single

Drain-source On Resistance-Max :

0.003Ohm

FET Type :

N-Channel

Series :

OptiMOS™

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 139W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

8-PowerTDFN

Pbfree Code :

yes

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn-Off Delay Time :

43 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3m Ω @ 50A, 10V

Height :

1.1mm

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

80V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

26 Weeks

Rise Time :

12ns

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

80V

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

250 mJ

Vgs(th) (Max) @ Id :

3.8V @ 95μA

Vgs (Max) :

±20V

Fall Time (Typ) :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 40V

Continuous Drain Current (ID) :

22A

Mounting Type :

Surface Mount

Weight :

506.605978mg

Terminal Form :

Flat