BSC030N03MSGATMA1

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Mfr.Part #
BSC030N03MSGATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 21A/100A TDSON
Stock
38,698
In Stock :
38,698

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
400A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Lead Free :
Contains Lead
Series :
OptiMOS™
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
75 mJ
Halogen Free :
Halogen Free
Published :
2010
Number of Terminations :
8
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Number of Pins :
8
Current - Continuous Drain (Id) @ 25°C :
21A Ta 100A Tc
Max Dual Supply Voltage :
30V
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Qualification Status :
Not Qualified
Factory Lead Time :
26 Weeks
Mount :
Surface Mount
Package / Case :
8-PowerTDFN
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 15V
Terminal Form :
Flat
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3m Ω @ 30A, 10V
Rise Time :
10ns
Continuous Drain Current (ID) :
21A
Power Dissipation :
69W
Contact Plating :
Tin
Pin Count :
8
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
16V
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
2V @ 250μA
Pbfree Code :
No
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Power Dissipation-Max :
2.5W Ta 69W Tc
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC030N03MSGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, BSC030N03MSGATMA1 pinout, BSC030N03MSGATMA1 datasheet PDF, BSC030N03MSGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC030N03MSGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC030N03MSGATMA1


N-Channel Tape & Reel (TR) 3m Ω @ 30A, 10V ±20V 5700pF @ 15V 73nC @ 10V 8-PowerTDFN

BSC030N03MSGATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 5700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSC030N03MSGATMA1 Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 400A.


BSC030N03MSGATMA1 Applications


There are a lot of Infineon Technologies
BSC030N03MSGATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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