BSC030N03MSGATMA1
- Mfr.Part #
- BSC030N03MSGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/100A TDSON
- Stock
- 38,698
- In Stock :
- 38,698
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Series :
- OptiMOS™
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Halogen Free :
- Halogen Free
- Published :
- 2010
- Number of Terminations :
- 8
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 100A Tc
- Max Dual Supply Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 26 Weeks
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 15V
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 30A, 10V
- Rise Time :
- 10ns
- Continuous Drain Current (ID) :
- 21A
- Power Dissipation :
- 69W
- Contact Plating :
- Tin
- Pin Count :
- 8
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pbfree Code :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BSC030N03MSGATMA1
BSC030N03MSGATMA1 Documents

N-Channel Tape & Reel (TR) 3m Ω @ 30A, 10V ±20V 5700pF @ 15V 73nC @ 10V 8-PowerTDFN
BSC030N03MSGATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 5700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BSC030N03MSGATMA1 Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 400A.
BSC030N03MSGATMA1 Applications
There are a lot of Infineon Technologies
BSC030N03MSGATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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