BSC030N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

10ns

Current - Continuous Drain (Id) @ 25°C :

21A Ta 100A Tc

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 69W Tc

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

21A

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Qualification Status :

Not Qualified

Terminal Form :

Flat

Pin Count :

8

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

75 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 15V

Max Dual Supply Voltage :

30V

Power Dissipation :

69W

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

No

Published :

2010

Pulsed Drain Current-Max (IDM) :

400A

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

Package / Case :

8-PowerTDFN

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

3m Ω @ 30A, 10V

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

OptiMOS™